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P channel RAD Hard Field Effect Transistor
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    Electrical characteristics(TA=25) is listed in Table 2.

    Table 2 Electrical Characteristics

    Symbols

    parameters

    Min

    Max

    Units

    Test   Conditions

    BVDSS

    Drain-to-Source  Breakdown Voltage

    -100

    V

    VGS=0V, ID=-1.0mA

    RDS(ON)

    Static  Drain-to-Source On-State Resistance

    0.3

    Ω

    VGS=-12V,  ID=-7A

    -

    0.35

    Ω

    VGS=-12V,  ID=-11A

    VGS(TH)

    Gate  Threshold Voltage

    -2.0

    -4.0

    V

    VDS=  VGS, ID=-1.0mA

    gfs

    Forward  transconductance

    2.5

    S

    VDS=-15V,  ID=-7A

    IDSS

    Zero  Gate Voltage Drain Current

    -25

    μA

    VDS=-80V,VGS=0V

    IGSS

    Gate-to-Source  Leakage Forward

    -100

    nA

    VGS=-20V, VDS=0V

    Gate-to-Source  Leakage Reverse

    100

    nA

    VGS=20V, VDS=0V

    Qg

    Total  Gate Charge

    45

    nC

    VGS=-12V,ID=-11A

    VDS=-50V

    Qgs

    Gate-to-Source  Charge

    10

    Qgd

    Gate-to-Drain(Miller)Charge

    25

    td(on)

    Turn-On  Delay Time

    30

    ns

    VDD=-50V,ID=-11A

    VGS=-12V,RG=7.5Ω

    tr

    Rise  Time

    50

    td(off)

    Turn-Off  Delay Time

    70

    tf

    Fall  Time

    70

    VSD

    Diode  Forward Voltage

    -3

    V

    Tj=25,IS=-11A,VGS=0V

    trr

    Reverse  Recovery Time

    250

    ns

    Tj=25,IF=-11A,

    di/dt≤-100A/μs, VDD≤-50V

    RthJC

    Thermal  resistance(Junction to case)

    1.67

    /W

    TJ=-10V(VDS),IH=-3A(ID)    IM=10mA,tH=10s,tMD=20μs



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